PART |
Description |
Maker |
2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC] NEC Corp.
|
FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp. ON Semiconductor
|
CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB 2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
|
NXP Semiconductors N.V.
|
PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体 60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
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